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Fabricante Electrónico No. de pieza Datasheet Descripción Electrónicos WOLFSPEED, INC. PXAC210552FC-V1-R2 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Search Partnumber : Start with "PXAC210552FC-V1-R2" - Total : 59 ( 1/3 Page) WOLFSPEED, INC. PXAC210552FC-V1-R0 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Infineon Technologies A... PXAC210552FC 206Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04 Cree, Inc PXAC210552FC 600Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz WOLFSPEED, INC. PXAC210552FC 702Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 Infineon Technologies A... PXAC210552MD 466Kb/10P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25 PXAC210552ND 466Kb/9P Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09 PXAC213308FV 1Mb/8P Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04 Cree, Inc PXAC213308FV 518Kb/8P Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Infineon Technologies A... PXAC200902FC 489Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11 Cree, Inc PXAC200902FC 600Kb/10P Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz Infineon Technologies A... PXAC201202FC 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 Cree, Inc PXAC201202FC 590Kb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz Infineon Technologies A... PXAC201202FCV2R0 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R0XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R250 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201202FCV2R250XTMA1 1Mb/10P Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 PXAC201602FC 402Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19 Cree, Inc PXAC201602FC 529Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz Infineon Technologies A... PXAC201602FCV1R0 402Kb/9P Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19

PXAC210552FC-V1-R2 Datasheet, PDF [Reseller]

Reseller No. de pieza Fabricante Electrónico Datasheet Descripción Electrónicos Buy Now Element14 PXA980 BULGIN LIMITED CABLE GLAND PACK, 14-20MM, IP68; Kit Contents:3 Pieces of size 18-20mm, 16-18 and 14-16mm Diameter C... PXA911/04/S BULGIN LIMITED CIRCULAR CONNECTOR, RECEPTACLE, 4 POSITION, CABLE; Connector Type:Circular Industrial; Product Range...

PXAC210552FC-V1-R2 Reseller