| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Vishay Siliconix |
VB30150C
|
168Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08
|
|
VB30150C
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30150C
|
159Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
16-Aug-13
|
|
VB30150C
|
148Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
16-Aug-13
|
|
VB30150C
|
216Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-Jun-2018
|
 Inchange Semiconductor ... |
VB30150C
|
314Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30150C-E3-4W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30150C-E3-8W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30150C-E3/4W
|
168Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08
|
|
VB30150C-E3/4W
|
169Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30150C-E3/8W
|
168Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
19-May-08
|
|
VB30150C-E3/8W
|
169Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30150C-M3
|
87Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
22-May-13
|
|
VB30150C-M3
|
102Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
20-Jun-2018
|
 Inchange Semiconductor ... |
VB30150C-M3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30150C-M3
|
77Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
22-May-13
|
|
VB30150C-M3
|
102Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5.0 A
20-Jun-2018
|