| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Inchange Semiconductor ... |
18N10
|
67Kb/2P |
Fast Switching
|
 Goford Semiconductor |
18N10
|
637Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
 Baumer IVO GmbH & Co. K... |
18N1100
|
96Kb/1P |
Capacitive proximity sensors
|
|
18N1200
|
96Kb/1P |
Capacitive proximity sensors
|
|
18N1600
|
79Kb/1P |
Capacitive proximity sensors
|
|
18N1600S14
|
81Kb/1P |
Capacitive proximity sensors
|
 Inchange Semiconductor ... |
18N20
|
305Kb/2P |
isc N-Channel MOSFET Transistor
|
 Goford Semiconductor |
18N20
|
662Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
18N20
|
4Mb/9P |
DC-DC & DC-AC Converters for telecom,
|
 KIA Semiconductor Techn... |
18N20A
|
182Kb/6P |
18A竊?00V N-CHANNEL MOSFET
|
 Goford Semiconductor |
18N20A
|
966Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
18N20F
|
758Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
18N20GH
|
1Mb/7P |
N-Channel 200 V (D-S) MOSFET
|
|
18N20GJ-HF
|
1Mb/6P |
N-Channel 200V (D-S) MOSFET
|
 Advanced Power Electron... |
18N20GS
|
73Kb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSF
201501124 |
 Goford Semiconductor |
18N20J
|
714Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
18N20J
|
4Mb/9P |
DC-DC & DC-AC Converters for telecom,
|
|
18N20T
|
4Mb/9P |
DC-DC & DC-AC Converters for telecom,
|
 Unisonic Technologies |
18N25
|
180Kb/5P |
18A, 250V N-CHANNEL POWER MOSFET
|
|
18N25G-TF3-T
|
180Kb/5P |
18A, 250V N-CHANNEL POWER MOSFET
|