| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Motorola, Inc |
2N5570
|
184Kb/4P |
BIDIRECTIONAL TRIODE THYRISTORS
|
New Jersey Semi-Conduct... |
2N5570
|
117Kb/1P |
TRIACS BIDIRECTIONAL TRIODE THYRISTORS
|
Motorola, Inc |
2N5572
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
New Jersey Semi-Conduct... |
2N5572
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
Motorola, Inc |
2N5573
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
New Jersey Semi-Conduct... |
2N5573
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
|
2N5573
|
92Kb/1P |
TRIAC, V(DRM) = 200V TO 299.9V
|
Motorola, Inc |
2N5574
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
New Jersey Semi-Conduct... |
2N5574
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
|
2N5574
|
186Kb/2P |
5-A SILICON TRIAC
|
Seme LAB |
2N5575
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
New Jersey Semi-Conduct... |
2N5575
|
77Kb/1P |
SI NPN POWER BJT, I(C)
|
|
2N5578
|
122Kb/1P |
SI NPN POWER BJT, I(C)
|
|
2N550
|
124Kb/1P |
NPN SWITCHING TRANSISTORS
|
Intersil Corporation |
2N5515
|
72Kb/2P |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
|
|
2N5515
|
4Mb/122P |
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
2N5515
|
165Kb/1P |
LOW FREQUENCY-LOW NOISE DUAL JFETS
|
Intersil Corporation |
2N5516
|
72Kb/2P |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
|
|
2N5516
|
4Mb/122P |
P-CHANNEL JFET
|
New Jersey Semi-Conduct... |
2N5516
|
165Kb/1P |
LOW FREQUENCY-LOW NOISE DUAL JFETS
|
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