| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Sanyo Semicon Device |
2SC3600
|
116Kb/4P |
high-Definition CRT Display Video Output Applications?
|
|
2SC3601
|
212Kb/8P |
Ultrahigh-Definition CRT Display Video Output Applications?
|
NEC |
2SC3603
|
89Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
eleflow technologies co... |
2SC3603
|
222Kb/4P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC3603
|
214Kb/10P |
SILICON TRANSISTOR
1995 |
NEC |
2SC3604
|
94Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
New Jersey Semi-Conduct... |
2SC3604
|
198Kb/2P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC3604
|
218Kb/10P |
SILICON TRANSISTOR
1996 |
Toshiba Semiconductor |
2SC3605
|
294Kb/5P |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
|
2SC3605
|
73Kb/1P |
TRANSISTOR
|
|
2SC3607
|
315Kb/5P |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
List of Unclassifed Man... |
2SC3608
|
179Kb/1P |
2SC3608
|
Toshiba Semiconductor |
2SC3608
|
73Kb/1P |
TRANSISTOR
|
Panasonic Semiconductor |
2SC3611
|
70Kb/4P |
Silicon NPN epitaxial planar type(For video amplifier)
2001 MAR |
Toshiba Semiconductor |
2SC3613
|
226Kb/3P |
NPN EPITAXIAL TYPE (VIDEO DRIVER STAGE IN HIGH RESOUTION DISPLAY, HIGH SPEED SWITCHING APPLICATIONS)
|
NEC |
2SC3615
|
164Kb/3P |
NPN SILICON TRANSISTOR
|
|
2SC3616
|
168Kb/3P |
NPN SILICON TRANSISTOR
|
|
2SC3617
|
225Kb/4P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
Guangdong Kexin Industr... |
2SC3617
|
51Kb/1P |
NPN Silicon Epitaxia
|
Renesas Technology Corp |
2SC3617
|
346Kb/6P |
Old Company Name in Catalogs and Other Documents
|
Mexican ▼ 
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