| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
NEC |
2SJ330
|
339Kb/6P |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
VBsemi Electronics Co.,... |
2SJ330
|
932Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ330
|
565Kb/8P |
CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
1993 |
Inchange Semiconductor ... |
2SJ330
|
296Kb/2P |
isc P-Channel MOSFET Transistor
|
VBsemi Electronics Co.,... |
2SJ333
|
209Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Toshiba Semiconductor |
2SJ334
|
308Kb/5P |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
|
2SJ334
|
786Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ334
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Inchange Semiconductor ... |
2SJ334
|
383Kb/2P |
isc P-Channel MOSFET Transistor
|
Toshiba Semiconductor |
2SJ334
|
786Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ334
|
434Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive
|
TECH PUBLIC Electronics... |
2SJ335-TP
|
2Mb/4P |
P-Channel Enhancement MOSFET
|
Sanyo Semicon Device |
2SJ337
|
88Kb/3P |
Very High-Speed Switching Applications
|
VBsemi Electronics Co.,... |
2SJ337-TL-E
|
1,016Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Toshiba Semiconductor |
2SJ338
|
91Kb/2P |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
|
|
2SJ338
|
125Kb/3P |
Audio-Frequency Power Amplifier Applications
|
|
2SJ338
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SJ338
|
125Kb/3P |
Audio-Frequency Power Amplifier Applications
|
Sanyo Semicon Device |
2SJ339
|
40Kb/4P |
Ultrahigh-Speed Switching Applications
|
Guangdong Kexin Industr... |
2SJ3001
|
816Kb/6P |
P-Channel MOSFET
|
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