| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Advanced Power Electron... |
AP4523GD
|
99Kb/7P |
Low Gate Charge
|
|
AP4523GH
|
99Kb/7P |
Simple Drive Requirement, Good Thermal Performance
|
|
AP4523GH
|
99Kb/7P |
Simple Drive Requirement
|
|
AP4523GM
|
136Kb/7P |
Simple Drive Requirement, Low On-resistance
|
|
AP4523GM
|
136Kb/7P |
Simple Drive Requirement
|
|
AP4521GEH
|
123Kb/7P |
Simple Drive Requirement, Good Thermal Performance
|
|
AP4521GEH
|
123Kb/7P |
Good Thermal Performance
|
|
AP4521GEM
|
120Kb/7P |
Simple Drive Requirement, Fast Switching Performance
|
 SHENZHEN DOINGTER SEMIC... |
AP4521GEM
|
807Kb/5P |
N-Chanel and P-Channel MOSFET use advanced trench technology
|
 Advanced Power Electron... |
AP4521GEM
|
120Kb/7P |
Simple Drive Requirement
|
|
AP4525GEH
|
118Kb/7P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
AP4525GEH
|
1Mb/13P |
N- and P-Channel 40 V (D-S) MOSFET
|
 Advanced Power Electron... |
AP4525GEH-A
|
191Kb/8P |
NAND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4525GEH-HF
|
115Kb/7P |
Simple Drive Requirement
|
|
AP4525GEH-HF
|
89Kb/8P |
Fast Switching Performance
|
|
AP4525GEH
|
191Kb/8P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4525GEM
|
118Kb/7P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4525GEM-HF
|
130Kb/7P |
Simple Drive Requirement, Low On-resistance
|
|
AP4525GEM-HF
|
130Kb/7P |
Simple Drive Requirement
|
|
AP4525GEM-HF
|
89Kb/8P |
Fast Switching Performance
|