| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Intersil Corporation |
FSGYC260D1
|
82Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYC260R3
|
82Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYC260R4
|
82Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYE230D1
|
81Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYE230R
|
81Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYE230R3
|
81Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
|
FSGYE230R4
|
81Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000 |
LEMO Connectors |
FSG.0B.302.CLAD32
|
154Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CLAD42
|
236Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CLAK52
|
93Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CLAK52Z
|
108Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CLAK62
|
87Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CLAK62Z
|
102Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.CYCD32
|
155Kb/4P |
B - Indoor keyed
|
|
FSG.0B.302.KLAD42
|
184Kb/4P |
B - Indoor keyed
|
|
FSG.0B.303.CLAD32Z
|
184Kb/4P |
B - Indoor keyed
|
|
FSG.0B.303.CLAD42Z
|
149Kb/4P |
B - Indoor keyed
|
|
FSG.0B.303.CLAD52
|
150Kb/4P |
B - Indoor keyed
|
|
FSG.0B.303.CLAK52
|
100Kb/4P |
B - Indoor keyed
|
|
FSG.0B.303.CLAK52Z
|
115Kb/4P |
B - Indoor keyed
|
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