| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Samsung semiconductor |
IRF230
|
212Kb/5P |
N-CHANNEL POWER MOSFETS
|
 Seme LAB |
IRF230
|
22Kb/2P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
|
 Fairchild Semiconductor |
IRF230
|
177Kb/6P |
N-Channel Power MOSFETs, 12A, 150-200 V
|
 Intersil Corporation |
IRF230
|
69Kb/7P |
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
October 1997 |
 International Rectifier |
IRF230
|
151Kb/7P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
 New Jersey Semi-Conduct... |
IRF230
|
106Kb/3P |
N-Channel Power MOSFETs, 12 A, 150-200 V
|
|
IRF230
|
106Kb/3P |
N-Channel Power MOSFETs, 12 A, 150-200 V
|
 Inchange Semiconductor ... |
IRF230
|
65Kb/2P |
High Power, High Speed Applications
|
 ARTSCHIP ELECTRONICS CO... |
IRF230
|
155Kb/6P |
N-Channel Power Mosfets
|
 Fairchild Semiconductor |
IRF230-233
|
177Kb/6P |
N-Channel Power MOSFETs, 12A, 150-200 V
|
 Samsung semiconductor |
IRF231
|
212Kb/5P |
N-CHANNEL POWER MOSFETS
|
 Fairchild Semiconductor |
IRF231
|
177Kb/6P |
N-Channel Power MOSFETs, 12A, 150-200 V
|
 Intersil Corporation |
IRF231
|
69Kb/7P |
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
October 1997 |
 New Jersey Semi-Conduct... |
IRF231
|
106Kb/3P |
N-Channel Power MOSFETs, 12 A, 150-200 V
|
|
IRF231
|
106Kb/3P |
N-Channel Power MOSFETs, 12 A, 150-200 V
|
 Inchange Semiconductor ... |
IRF231
|
48Kb/2P |
High Power,High Speed Applications
|
 ARTSCHIP ELECTRONICS CO... |
IRF231
|
155Kb/6P |
N-Channel Power Mosfets
|
 Samsung semiconductor |
IRF233
|
212Kb/5P |
N-CHANNEL POWER MOSFETS
|
 Fairchild Semiconductor |
IRF233
|
177Kb/6P |
N-Channel Power MOSFETs, 12A, 150-200 V
|
 Intersil Corporation |
IRF233
|
69Kb/7P |
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
October 1997 |