| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Samsung semiconductor |
IRF240
|
211Kb/5P |
N-CHANNEL POWER MOSFET
|
Seme LAB |
IRF240
|
19Kb/2P |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
Fairchild Semiconductor |
IRF240
|
140Kb/5P |
N-Channel Power MOSFETs, 18A, 150-200V
|
Intersil Corporation |
IRF240
|
59Kb/7P |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
March 1999 |
International Rectifier |
IRF240
|
149Kb/7P |
REPETITIVE AVALANCHE AND dv/dt RATED
|
Seme LAB |
IRF240
|
111Kb/3P |
N-CHANNEL POWER MOSFET
|
New Jersey Semi-Conduct... |
IRF240
|
101Kb/2P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
|
International Rectifier |
IRF240
|
150Kb/7P |
Repetitive Avalanche Ratings
|
Inchange Semiconductor ... |
IRF240
|
48Kb/2P |
Static Drain-Source On-Resistance
|
List of Unclassifed Man... |
IRF240
|
2Mb/31P |
SEMICONDUCTORS
|
Fairchild Semiconductor |
IRF240-243
|
140Kb/5P |
N-Channel Power MOSFETs, 18A, 150-200V
|
New Jersey Semi-Conduct... |
IRF240R
|
168Kb/2P |
Avalanche Energy Rated N-Channel Power MOSFETs
|
Seme LAB |
IRF240SMD
|
22Kb/2P |
N.CHANNEL POWER MOSFET
|
|
IRF240
|
111Kb/3P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRF240
|
150Kb/7P |
Repetitive Avalanche Ratings
|
Samsung semiconductor |
IRF241
|
211Kb/5P |
N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor |
IRF241
|
140Kb/5P |
N-Channel Power MOSFETs, 18A, 150-200V
|
Inchange Semiconductor ... |
IRF241
|
48Kb/2P |
Static Drain-Source On-Resistance
|
New Jersey Semi-Conduct... |
IRF241R
|
168Kb/2P |
Avalanche Energy Rated N-Channel Power MOSFETs
|
Samsung semiconductor |
IRF242
|
211Kb/5P |
N-CHANNEL POWER MOSFET
|
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