| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
International Rectifier |
IRF7501PBF
|
184Kb/9P |
Generation V Technology Ulrtra Low On-Resistance
|
|
IRF7501PBF
|
184Kb/9P |
Ulrtra Low On-Resistance
|
|
IRF7501PBF
|
184Kb/9P |
Ulrtra Low On-Resistance
|
|
IRF7501TRPBF
|
184Kb/9P |
Generation V Technology
|
|
IRF7503
|
114Kb/8P |
Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
|
IRF7503PBF
|
1,008Kb/8P |
HEXFET짰 Power MOSFET
|
|
IRF7503PBF
|
1,014Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7503PBF
|
1,014Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7503TR
|
117Kb/8P |
Generation V Technology
|
|
IRF7504
|
115Kb/8P |
Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)
|
|
IRF7504PBF
|
1Mb/8P |
HEXFET Power MOSFET
|
|
IRF7504PBF
|
1Mb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7504PBF
|
1Mb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7504TRPBF
|
1Mb/8P |
Generation V Technology
|
|
IRF7506
|
103Kb/8P |
Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)
|
|
IRF7506
|
210Kb/8P |
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
|
|
IRF7506PBF
|
210Kb/8P |
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
|
|
IRF7506PBF
|
215Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7506PBF
|
215Kb/8P |
ULTRA LOW ON RESISTANCE
|
|
IRF7506TRPBF
|
215Kb/8P |
Generation V Technology
|
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