| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
International Rectifier |
IRFNG40
|
502Kb/7P |
Simple Drive Requirements
|
|
IRFNG50
|
213Kb/6P |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A)
|
|
IRFNG50
|
488Kb/7P |
Simple Drive Requirements
|
|
IRFNG50
|
488Kb/7P |
Simple Drive Requirements
|
|
IRFN044
|
211Kb/6P |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
|
|
IRFN044
|
137Kb/7P |
Simple Drive Requirements
|
Seme LAB |
IRFN044SMD
|
22Kb/2P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRFN044
|
137Kb/7P |
Simple Drive Requirements
|
|
IRFN054
|
219Kb/7P |
Simple Drive Requirements
|
|
IRFN054
|
218Kb/6P |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
|
Seme LAB |
IRFN054SMD
|
23Kb/2P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRFN054
|
219Kb/7P |
Simple Drive Requirements
|
Seme LAB |
IRFN130SMD
|
21Kb/2P |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
|
IRFN130SMD05
|
41Kb/2P |
N?밅HANNEL POWER MOSFET
|
|
IRFN130SMD05
|
29Kb/2P |
N?밅HANNEL POWER MOSFET FOR HI?밨EL APPLICATIONS
|
International Rectifier |
IRFN140
|
218Kb/6P |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A)
|
|
IRFN140
|
186Kb/7P |
Simple Drive Requirements
|
Seme LAB |
IRFN140SMD
|
22Kb/2P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRFN140
|
186Kb/7P |
Simple Drive Requirements
|
|
IRFN150
|
217Kb/6P |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)
|
Mexican ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
British
New Zealand