S115D Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Hamamatsu Corporation	S11500-1007	453Kb/7P	Enhanced near infrared sensitivity: QE=40% (貫=1000 nm), back-thinned FFT-CCD
	S11500-1007	513Kb/8P	CCD area image sensor
	S11510	465Kb/8P	Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
	S11510-1006	465Kb/8P	Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
	S11510-1106	465Kb/8P	Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
	S11510	465Kb/8P	Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
	S11510	665Kb/7P	IR-enhanced CCD image sensors
	S11519	571Kb/4P	Enhanced near IR sensitivity, using a MEMS technology
Seiko Instruments Inc	S1155	486Kb/28P	HIGH RIPPLE-REJECTION LOW DROPOUT
Yangzhou yangjie electr...	S115F	105Kb/2P	Schottky Rectifier
ON Semiconductor	S115FA	168Kb/6P	Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V March, 2022 - Rev. 3
ON Semiconductor	S115FP	163Kb/6P	Surface Mount Schottky Barrier Rectifiers 1 A, 20 V - 150 V August, 2024 - Rev. 3

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