| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Seoul Semiconductor |
STW9C2SB
|
1Mb/31P |
High Color Quality with CRI Min.90
|
|
STW9C2SB-NZ
|
1Mb/30P |
Thermally Enhanced Package Design
|
Dialight Corporation |
STW9C2N
|
288Kb/2P |
DuroSite짰 LED Area Light
|
Seoul Semiconductor |
STW9C12B
|
1Mb/26P |
Achieving the best system cost in Mid/High Power
|
STMicroelectronics |
STW90NF20
|
816Kb/12P |
N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET??Power MOSFET
04-Aug-2008 |
Inchange Semiconductor ... |
STW90NF20
|
351Kb/2P |
isc N-Channel MOSFET Transistor
|
Seoul Semiconductor |
STW9A12D
|
1Mb/27P |
Market Standard 3528 Package Size
|
|
STW9A12D-E1
|
1Mb/31P |
Mid-Power LED
|
|
STW9A12D-E2
|
1Mb/31P |
Mid-Power LED
|
Dialight Corporation |
STW9A2N
|
287Kb/2P |
DuroSite짰 LED Area Light
|
Seoul Semiconductor |
STW9B12B-NZ
|
947Kb/23P |
Achieving the best system cost in Mid Power
|
|
STW9B12C
|
685Kb/23P |
Thermally Enhanced Package Design
|
|
STW9B12G
|
718Kb/24P |
Thermally Enhanced Package Design
|
STMicroelectronics |
STW9N150
|
151Kb/9P |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET
24-May-2007 |
Inchange Semiconductor ... |
STW9N150
|
373Kb/2P |
isc N-Channel MOSFET Transistor
|
STMicroelectronics |
STW9N150
|
258Kb/12P |
N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET
24-May-2007 |
|
STW9N80K5
|
795Kb/16P |
N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages
26-Jul-2016 |
|
STW9NA60
|
123Kb/10P |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Oct-1998 |
Inchange Semiconductor ... |
STW9NA60
|
352Kb/2P |
isc N-Channel MOSFET Transistor
|
STMicroelectronics |
STW9NA80
|
132Kb/10P |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
Nov-1998 |
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