| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 VBsemi Electronics Co.,... |
UT3419G-AE3-R
|
472Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3419G-AE3-R
|
204Kb/4P |
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3419G-AE3-R
|
145Kb/3P |
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3419L-AE3-R
|
145Kb/3P |
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3419
|
204Kb/4P |
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3413
|
241Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3413G-AE2-R
|
241Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3413G-AE2-R
|
251Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT3413G-AE3-R
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3413G-AE3-R
|
241Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3413G-AE3-R
|
251Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3413L-AE2-R
|
241Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3413L-AE3-R
|
241Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT3413L-AE3-R
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT3413
|
251Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
|
UT3414
|
200Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT3414G-AE3-R
|
200Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT3414G-AE3-R
|
222Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3414L-AE3-R
|
200Kb/4P |
N-CHANNEL ENHANCEMENT MODE
|
|
UT3414
|
222Kb/4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|