V2-R0 Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTRA262802FC-V2-R0	497Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz
WOLFSPEED, INC.	GTRA262802FC-V2-R0	515Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
WOLFSPEED, INC.	GTRA263902FC-V2-R0	531Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Rev. 04.1, 2022-1-27
Cree, Inc	GTVA212701FA-V2-R0	434Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
WOLFSPEED, INC.	GTVA212701FA-V2-R0	566Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
Cree, Inc	GTVA262701FA-V2-R0	489Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA-V2-R0	506Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
Cree, Inc	GTVA262711FA-V2-R0	464Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262711FA-V2-R0	594Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
WOLFSPEED, INC.	PTVA120251EA-V2-R0	787Kb/14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Rev. 06, 2023-07-10

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