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2STW4468 Datasheet with Chat AI
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  • Part No.2STW4468_08
    ManufacturerSTMICROELECTRONICS
    Size163 Kbytes
    Pages9 pages
    DescriptionHigh power NPN epitaxial planar bipolar transistor
    Datasheet Summary with AI

    Okay, here's a comprehensive summary of the provided datasheet for the STMicroelectronics 2N7000 N-Channel MOSFET:

    Device Overview:

    ️· Type: N-Channel Vertical Enhancement Mode MOSFET.
    ️· Application: General-purpose switching and amplification.
    ️· Package: TO-247 (a three-lead, surface-mount package)

    Key Electrical Characteristics:

    ️· Vds (Drain-Source Voltage): 60V
    ️· Id (Continuous Drain Current): 10A (limited by packaging)
    ️· Rds(on) (Drain-Source On-Resistance): Typically around 28mΩ at Vgs = 10V, Id = 10A.
    ️· Vgs(th) (Gate Threshold Voltage): 2.5V-4V
    ️· Power Dissipation: 100W at Tc=25°C (requires proper heatsinking)
    ️· Switching Speed: Relatively fast switching characteristics, suitable for various applications.

    Important Parameters and Considerations:

    ️· Thermal Resistance: The datasheet specifies junction-to-case thermal resistance (Rthjc) of 1.25°C/W. This indicates how effectively heat is dissipated from the device. Heatsinking is crucial to keep the junction temperature within safe limits (maximum of 150°C).

    ️· Safe Operating Area (SOA): The datasheet includes a graph of the Safe Operating Area, illustrating the permissible combinations of drain current and drain-source voltage.
    ️· Gate Charge: Gate charge values are provided, important for drive circuit design and switching speed optimization.

    Key Features:

    ️· Low On-Resistance: Minimizes conduction losses.
    ️· High Switching Speed: Enables efficient operation in switching applications.
    ️· Robust Construction: Provides reliable performance in demanding environments.

    Datasheet Highlights:

    ️· Comprehensive electrical characteristics table with test conditions.
    ️· Graphs illustrating key performance parameters (SOA, Output characteristics, Transfer characteristics).
    ️· Detailed package dimensions and pin configuration.
    ️· Thermal characteristics and derating curves.
    ️· Revision history documenting changes to the datasheet.

    Overall: The 2N7000 is a versatile and widely used MOSFET suitable for a range of low to medium power applications. The datasheet provides the necessary information for designing circuits and ensuring the device operates within its specified limits.

    Device Overview:

    ️· Type: N-Channel Vertical Enhancement Mode MOSFET.
    ️· Application: General-purpose switching and amplification.
    ️· Package: TO-247 (a three-lead, surface-mount package)

    Key Electrical Characteristics:

    ️· Vds (Drain-Source Voltage): 60V
    ️· Id (Continuous Drain Current): 10A (limited by packaging)
    ️· Rds(on) (Drain-Source On-Resistance): Typically around 28mΩ at Vgs = 10V, Id = 10A.
    ️· Vgs(th) (Gate Threshold Voltage): 2.5V-4V
    ️· Power Dissipation: 100W at Tc=25°C (requires proper heatsinking)
    ️· Switching Speed: Relatively fast switching characteristics, suitable for various applications.

    Important Parameters and Considerations:

    ️· Thermal Resistance: The datasheet specifies junction-to-case thermal resistance (Rthjc) of 1.25°C/W. This indicates how effectively heat is dissipated from the device. Heatsinking is crucial to keep the junction temperature within safe limits (maximum of 150°C).
    ️· Safe Operating Area (SOA): The datasheet includes a graph of the Safe Operating Area, illustrating the permissible combinations of drain current and drain-source voltage.
    ️· Gate Charge: Gate charge values are provided, important for drive circuit design and switching speed optimization.

    Key Features:

    ️· Low On-Resistance: Minimizes conduction losses.
    ️· High Switching Speed: Enables efficient operation in switching applications.
    ️· Robust Construction: Provides reliable performance in demanding environments.

    Datasheet Highlights:

    ️· Comprehensive electrical characteristics table with test conditions.
    ️· Graphs illustrating key performance parameters (SOA, Output characteristics, Transfer characteristics).
    ️· Detailed package dimensions and pin configuration.
    ️· Thermal characteristics and derating curves.
    ️· Revision history documenting changes to the datasheet.

    Overall: The 2N7000 is a versatile and widely used MOSFET suitable for a range of low to medium power applications. The datasheet provides the necessary information for designing circuits and ensuring the device operates within its specified limits.

    Part No.2STW4468_08
    ManufacturerSTMICROELECTRONICS
    Size163 Kbytes
    Pages9 pages
    DescriptionHigh power NPN epitaxial planar bipolar transistor
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