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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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2STW4468 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STW4468 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  October 2008 Rev 4 1/9 9 2STW4468 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Figure 1. Internal schematic diagram TO-247 1 2 3 Order code Marking Package Packaging 2STW4468 2STW4468 TO-247 Tube www.st.com |
Número de pieza similar - 2STW4468_08 |
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Descripción similar - 2STW4468_08 |
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