2STW4468_08 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	2STW4468

Descripción Electrónicos	High power NPN epitaxial planar bipolar transistor

PDF	9 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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2STW4468

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 200 V

0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 6 V

0.1

µA

V(BR)CEO

(1)

Pulse duration = 300 µs, duty cycle

≤ 1.5 %

Collector-emitter

breakdown voltage (IB = 0)

IC = 50 mA

140

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

200

V(BR)EBO (1)

Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 5 A

IB = 500 mA

IC = 7 A

IB = 700 mA

0.5

0.7

VBE

Base-emitter voltage

VCE = 5 V

IC = 5 A

1.3

hFE

DC current gain

IC = 3 A

VCE = 4 V

IC = 5 A

VCE = 4 V

140

Transition frequency

IC = 0.5 A

VCE = 12 V

MHz

CCBO

Collector-base

capacitance

(IE = 0)

VCB = 10 V

f = 1 MHz

150

ton

tstg

Resistive Load

Turn-on time

Storage time

Fall time

VCC = 60 V

IC = 5 A

IB1 = -IB2 = 0.5 A

0.22

4.3

0.5

µs

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