# BAT86 Schottky Diodes

## Features & Applications

️· Type: Metal-on-silicon Schottky barrier diode.
️· Applications: MOS device protection, steering, biasing, coupling diodes, fast switching, low logic level applications.
️· Protection: PN junction guard ring for electrostatic discharge protection.
️· Availability: Also available in Mini-MELF case (BAS86).
️· General Purpose: Suitable for general purpose applications.

## Mechanical Data

️· Case: DO-35 Glass Case
️· Weight: Approx. 0.13 g
️· Dimensions (inches & mm): (Data presented in table format within the original document)

## Maximum Ratings

️· Continuous Reverse Voltage (VR): -50 V
️· Forward Continuous Current (IF) @ 25°C: 200 mA
️· Repetitive Forward Current (IFRM) @ tp < 1s, Tamb = 25°C: 500 mA
️· Power Dissipation (Ptot) @ Tamb = 25°C: 200 mW
️· Junction Temperature (Tj): 125 °C
️· Ambient Operating Temperature (Tamb): -65 °C to +125 °C
️· Storage Temperature (TS): -65 °C to +150 °C
️· *Note: Ratings valid with leads 4mm from case at ambient temperature.*

## Electrical Characteristics

️· Forward Voltage (VF) Pulse Test:
- IF = 0.1 mA: 0.200 V
- IF = 1 mA: 0.275 V
- IF = 10 mA: 0.365 V
- IF = 30 mA: 0.460 V
- IF = 100 mA: 0.700 V
️· Leakage Current (IR) @ VR = 25V: 0.2 - 0.5 µA
️· Reverse Breakdown Voltage (V(BR)R): 50 V
️· Capacitance (Ctot) @ VR = 1V, f = 1MHz: 8 pF
️· Thermal Resistance (RthJA): 300 K/W
️· Reverse Recovery Time (trr): 5 ns
️· *Note: Electrical characteristics ratings valid with leads 4mm from case at ambient temperature.*