BAT86 datasheet(2/2 Pages) GE

No. de pieza	BAT86

Descripción Electrónicos	Schottky Diodes

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Fabricante Electrónico	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

223

BAT86

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

Pulse Test tp < 300 µs, δ < 2%

at IF = 0.1 mA

at IF = 1 mA

at IF = 10 mA

at IF = 30 mA

at IF = 100 mA

–

0.200

0.275

0.365

0.460

0.700

0.300

0.380

0.450

0.600

0.900

Leakage Current

at VR = 25 V

–0.2

0.5

µA

Reverse Breakdown Voltage

tested with 10

µA Pulses

V(BR)R

–

Capacitance

at VR = 1 V, f = 1 MHz

Ctot

––

Thermal Resistance

Junction to Ambient Air

RthJA

––

3001)

K / W

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA to IR = 1 mA

trr

––

1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.

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