FEATURES

Schottky Diodes

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

DO-35

max. ∅

Cathode

.020 (0.52)

Mark

max. ∅.079 (2.0)

Dimensions in inches and (millimeters)

Case: DO-35 Glass Case

Weight: approx. 0.13 g

5/98

222

BAT86

Symbol

Min.

Max.

Unit

Continuous Reverse Voltage

–50

V

–

mA

Repetitive Forward Current

–

mA

–

mW

Junction Temperature

–

125

°C

Ambient Operating Temperature Range

–65

+125

°C

Storage Temperature Range

–65

+150

°C

For general purpose applications.

This diode features low turn-on volt-

age. The devices are protected by a PN

junction guard ring against excessive volt-

age, such as electrostatic discharges.

Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring. The low for-

ward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level

applications.

This diode is also available in the Mini-MELF case

with the type designation BAS86.

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