SCT10N120AG pdf, SCT10N120AG Descripción Electrónicos, SCT10N120AG Datasheet, SCT10N120AG view ::: ALLDATASHEET :::

No. de pieza	SCT10N120AG

Descripción Electrónicos	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

Tamaño del archivo	238.62 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

Número de pieza similar - SCT10N120AG

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Inchange Semiconductor ...	SCT10N120AG	411Kb / 2P	N-Channel SiC MOSFET Transistor

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	SCT20N120AG	487Kb / 13P	Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package Rev 3 - October 2019
	SCTW100N65G2AG	423Kb / 11P	Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package 21-Nov-2018
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020