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MP2326GD Datasheet(PDF) 4 Page - Monolithic Power Systems |
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MP2326GD Datasheet(HTML) 4 Page - Monolithic Power Systems |
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4 / 25 page ![]() MP2326 – 19V, 4A, LOW IQ STEP-DOWN CONVERTER MP2326 Rev. 1.1 www.MonolithicPower.com 4 1/28/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 12V, TJ=-40°C to +125°C (7), typical value is tested at TJ=+25°C, unless otherwise noted. Parameters Symbol Condition Min Typ Max Units Supply current (shutdown) IIN VEN = 0V 0.1 1 μA Supply current (quiescent) IQ VEN = 5V, TJ = 25°C, VFB = 0.9V 40 55 μA VIN under-voltage lockout threshold rising INUVVth 3.5 3.7 3.9 V VIN under-voltage lockout threshold hysteresis INUVHYS 200 mV HS switch-on resistance HSRDS-ON 90 mΩ LS switch-on resistance LSRDS-ON 30 mΩ Switch leakage SWLKG VEN = 0V, VSW = 0V or 12V 0 1 μA High Side FET Current limit (8) ILIMIT_HS Duty=10%, TJ = 25°C 5.5 7.5 A Low Side FET Current limit ILIMIT_LS Force PWM Mode, Sink Current 1.5 A One-Shot on time (8) TON RFREQ=180k from FREQ/MODE Pin to VIN 230 ns Minimum on time (8) TON_min 90 ns Minimum off time TOFF_min 150 ns TJ = 25°C 594 600 606 Feedback voltage VFB TJ=-40°C to +125°C 591 600 609 mV Feedback current IFB VFB = 700mV 10 50 nA Soft start current ISS 4 8 11 μA EN Input High Voltage VEN_H 1.6 V EN Input Low Voltage VEN_L 0.4 V VEN = 2V 2 μA EN input current IEN VEN = 0V 0 Power-good rising threshold PGVth-Hi 0.9 VFB Power-good falling threshold PGVth-Lo 0.85 VFB Power-good delay PGTd 140 μs Power-good sink current capability VPG Sink 1mA 0.4 V Power-good leakage current IPG_LEAK VPG = 3.3V 50 nA Thermal shutdown (8) TSD 150 °C Thermal shutdown hysteresis (8) TSD-HYS 20 °C Notes: 7) Not tested in production. Guaranteed by over-temperature correlation. 8) Guaranteed by design and engineering sample characterization. |
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