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2STW200 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2STW200
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2STW200 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2STW200 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2STW200 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
2
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2STW200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=- 50mA, IB= 0
-80
V
VCE(sat)1
Collector-Emitter Saturation Voltage
IC= -5A ,IB= -20mA
-1.2
V
VCE(sat)2
Collector-Emitter Saturation Voltage
IC= -10A ,IB=- 40mA
-1.75
V
VCE(sat)3
Collector-Emitter Saturation Voltage
IC= -20A ,IB=- 80mA
-3.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -20A ,IB= -80mA
-3.3
V
VBE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -3V
-3.0
V
ICBO
Collector Cutoff Current
VCB=-80V, IE= 0
-50
μ
A
ICEO
Collector Cutoff Current
VCE=- 80V, IB= 0
-50
μ
A
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
-2
mA
hFE-1
DC Current Gain
IC=- 5A ; VCE= -3V
600
15000
hFE-2
DC Current Gain
IC= -10A ; VCE=- 3V
500
12000
hFE-3
DC Current Gain
IC=- 20A ; VCE= -3V
300
6000



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