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2STW200 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2STW200
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2STW200 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
1
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2STW200
DESCRIPTION
·
With TO-3PN packaging
·
Very high DC current gain
·
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·
Complement to Type 2STW100
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
AC-DC motor control
·
Electronic ignition
·
Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current
-6
A
PC
Collector Power Dissipation
130
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.96
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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