M58WR032FB datasheet(36/86 Pages) STMICROELECTRONICS

No. de pieza	M58WR032FB

Descripción Electrónicos	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	86 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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36 / 86 page

M58WR032FT, M58WR032FB

36/86

PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES

The Program and Erase times and the number of

Program/ Erase cycles per block are shown in Ta-

ble 14. Exact erase times may change depending

on the memory array condition. The best case is

when all the bits in the block or bank are at ‘0’ (pre-

programmed). The worst case is when all the bits

in the block or bank are at ‘1’ (not prepro-

grammed). Usually, the system overhead is negli-

gible with respect to the erase time.

In the M58WR032FT/B the maximum number of

Program/ Erase cycles depends on the VPP volt-

age supply used.

Table 14. Program/Erase Times and Endurance Cycles

Parameter

Condition

Min

Typ

Typical after

100k W/E

Cycles

Max

Unit

Erase

Parameter Block (4 KWord)(2)

0.3

2.5

Main Block (32

KWord)

Preprogrammed

0.8

Not Preprogrammed

1.1

Bank (4Mbit)

Preprogrammed

Not Preprogrammed

4.5

Program(3)

Word

100

µs

Parameter Block (4 KWord)

Main Block (32 KWord)

256

Suspend Latency

Program

µs

Erase

µs

Program/Erase

Cycles (per Block)

Main Blocks

100,000

cycles

Parameter Blocks

100,000

cycles

M58WR032FB Datasheet(PDF) 36 Page - STMicroelectronics

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