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M58WR032FB Datasheet(PDF) 37 Page - STMicroelectronics

No. de pieza M58WR032FB
Descripción Electrónicos  32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
PDF  86 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58WR032FB Datasheet(HTML) 37 Page - STMicroelectronics

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M58WR032FT, M58WR032FB
Note: 1. TA= –40 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2.24V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
4. Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
Erase
Parameter Block (4 KWord)
0.25
2.5
s
Main Block (32 KWord)
0.8
4
s
Bank (4Mbit)
3.5
s
Program(3)
Word/ Double Word/ Quadruple Word(4)
8100
µs
Parameter Block
(4 KWord)
Quad-Enhanced
Factory
10
ms
Enhanced Factory
25
ms
Quadruple Word(4)
8ms
Word
32
ms
Main Block (32
KWord)
Quad-Enhanced
Factory
80
ms
Enhanced Factory
200
ms
Quadruple Word(4)
64
ms
Word
256
ms
Bank (4Mbit)
Quad-Enhanced
Factory(4)
520
ms
Quadruple Word(4)
510
ms
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit



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