EMDA0P10F datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2013/12/20

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EMDA0P10F

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐1.5 ‐2.5

‐4.0

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐80V, VGS = 0V

‐1

A

VDS = ‐70V, VGS = 0V, TJ = 125 °C

‐25

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐10V ‐22

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐10V, ID = ‐11A

105

120

mΩ

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐11A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐25V, f = 1MHz

3522

Output Capacitance

Coss

130

Reverse Transfer Capacitance

Crss

114

Gate Resistance

VGS = 15mV, VDS = 0V, f = 1MHz

4.5

Total Gate Charge

1,2

VDS = ‐80V, VGS = ‐10V,

ID = ‐11A

Gate‐Source Charge

1,2

Qgs

13.8

Gate‐Drain Charge

1,2

Qgd

10.5

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐22

Pulsed Current

ISM

‐75

Forward Voltage

VSD

IF = IS, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = ‐5A, dlF/dt = 100A / S

150

Reverse Recovery Charge

Qrr

830

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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