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T25S16AFEPR Datasheet(PDF) 46 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza T25S16AFEPR
Descripción Electrónicos  3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
PDF  74 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

T25S16AFEPR Datasheet(HTML) 46 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Figure 7.11a Erase / Program Suspend Instruction(SPI Mode)
Figure 7.11b Erase / Program Suspend Instruction(QPI Mode)
7.2.7 Erase / Program Resume (7Ah)
The Erase / Program Resume command “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase / Program Suspend. The Resume command “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit equals to
0. After the Resume command is issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will
be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume command
“7Ah” will be ignored by the device. The Erase / Program Resume command sequence is shown in Figure
7.12. It is required that a subsequent Erase / Program Suspend command not to be issued within a minimum
of time of “tSUS” following a Resume command.
Figure 7.12 Erase/Program Resume Instruction(SPI or QPI Mode)
7.3 Read Commands
7.3.1 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the CS# pin low and then shifting the instruction code “03h” followed by a
HM25Q128A



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