PDTC123TMB datasheet(2/12 Pages) NEXPERIA

No. de pieza	PDTC123TMB

Descripción Electrónicos	NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = open

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NEXPERIA [Nexperia B.V. All rights reserved]

Página de inicio	https://www.nexperia.com/

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Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA123TMB.

1.2 Features and benefits

 100 mA output current capability

 Reduces component count

 Built-in bias resistors

 Reduces pick and place costs

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

PDTC123TMB

NPN resistor-equipped transistor; R1 = 2.2 k

Ω, R2 = open

Rev. 1 — 12 June 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

output current

100

bias resistor 1 (input)

Tamb = 25 °C

1.54

2.2

2.86

Ω

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