PQMB11 datasheet(6/14 Pages) NEXPERIA

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Nexperia

PQMB11

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PQMB11

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Product data sheet

26 October 2015

6 / 14

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current (emitter open)

VCB = -50 V; IE = 0 A; Tamb = 25 °C

-100

VCE = -30 V; IB = 0 A; Tamb = 25 °C

-1

µA

ICEO

collector-emitter cut-off

current (base open)

VCE = -30 V; IB = 0 A; Tamb = 150 °C

-5

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-400

µA

hFE

DC current gain

VCE = -5 V; IC = -5 mA; Tamb = 25 °C

VCEsat

collector-emitter

saturation voltage

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-150

VI(off)

off-state input voltage

VCE = -5 V; IC = -100 µA; Tamb = 25 °C

-1.1

-0.8

VI(on)

on-state input voltage

VCE = -0.3 V; IC = -10 mA; Tamb = 25 °C

-2.5

-1.8

bias resistor 1

[1]

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

[1]

0.8

1.2

collector capacitance

VCB = -10 V; IE = 0 A; f = 1 MHz;

Tamb = 25 °C

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

180

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

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