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PWD13F60 Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza PWD13F60
Descripción Electrónicos  High-density power driver -high voltage full bridge with integrated gate driver
PDF  26 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PWD13F60 Datasheet(HTML) 9 Page - STMicroelectronics

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DocID030865 Rev 2
9/26
PWD13F60
Electrical characteristics
26
4.2
Power MOSFET
VCCx = 15 V; TJ = 25 °C, unless otherwise specified.
Table 6. Power MOSFET electrical characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
MOSFET on/off states
V(BR)IDSS
Drain-source breakdown
voltage
ID = 1 mA(1)
600
-
-
V
IDSS
Zero gate voltage drain
current
VDS = 600 V
-
-
1
µA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA(1)
34
5
V
RDS(on)
Static drain-source on-
resistance
ID = 3 A; VGS = 10 V
-
0.32 0.425
MOSFET avalanche
IAS
Avalanche current, repetitive
or not repetitive
Pulse width limited by TJ max.(1)
--
3
A
EAS
Single pulse avalanche
energy
Starting TJ = 25 °C, ID = IAS , VDD = 50 V(1)
--
162
mJ
Source-drain diode
VSD
Diode forward on voltage
LINx = GND;
HINx = GND;
ISD = 3 A
-
0.8
1.25
V
1.
Tested at the wafer level before packaging.



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