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PWD13F60 Datasheet(PDF) 16 Page - STMicroelectronics

No. de pieza PWD13F60
Descripción Electrónicos  High-density power driver -high voltage full bridge with integrated gate driver
PDF  26 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PWD13F60 Datasheet(HTML) 16 Page - STMicroelectronics

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Functional description
PWD13F60
16/26
DocID030865 Rev 2
6.2
Bootstrap structure
Bootstrap circuitry is typically used to supply the high-voltage section. This function is
normally accomplished by a high-voltage fast recovery diode (see Figure 13 a).
In the PWD13F60 a patented integrated structure replaces the external diode. It is realized
by the series of the low-voltage diode and a high-voltage DMOS, driven synchronously with
the low side driver (LVG), as shown in Figure 13 b. An internal bootstrap provides the
DMOS driving voltage. The integrated diode structure is actively turned on and guarantees
the best performance when the low side driver is on.
In those applications whose control strategy requires recharging the bootstrap capacitor
also when the low side driver is off, the use of an external bootstrap diode in parallel to the
integrated structure is possible.
Figure 13. Bootstrap structure
6.3
VCC supply pins and UVLO function
The VCCx supply pin supplies the current to the low side section of the gate driver as well
as to the integrated bootstrap diode used to charge the bootstrap capacitor. During outputs
commutations the average current used to provide gate charge to the high side and low side
MOSFETs flow through these pins.
The two pins VCC1 and VCC2 separately supply power to the two drivers even if usually are
connected together at the power supply in the final application.
The PWD13F60 supply voltages (VCCx) are continuously monitored by an undervoltage
lockout (UVLO) circuitry that turns the high side and low side MOSFETs off when the supply
voltage goes below the VCC_thOFF threshold. The UVLO circuitry turns on the MOSFET,
accordingly to the LIN and HIN status, as soon as the supply voltage goes above the
VCC_thON voltage. A VCC_hys hysteresis is provided for the noise rejection purpose.
Two separate UVLO circuitries are provided to monitor VCC1 and VCC2. When a UVLO
occurs on a single rail, only the related half bridge MOSFETs are turned off.



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