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STGF30M65DF2 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STGF30M65DF2
Descripción Electrónicos  Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package
PDF  16 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30M65DF2 Datasheet(HTML) 5 Page - STMicroelectronics

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STGF30M65DF2
Electrical characteristics
DocID027430 Rev 5
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Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10
Ω
(see Figure 29: " Test circuit
for inductive load switching" )
31.6
-
ns
tr
Current rise time
13.4
-
ns
(di/dt)on
Turn-on current slope
1791
-
A/µs
td(off)
Turn-off-delay time
115
-
ns
tf
Current fall time
110
-
ns
Eon(1)
Turn-on switching energy
0.3
-
mJ
Eoff(2)
Turn-off switching energy
0.96
-
mJ
Ets
Total switching energy
1.26
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10
Ω,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
30
-
ns
tr
Current rise time
17
-
ns
(di/dt)on
Turn-on current slope
1435
-
A/µs
td(off)
Turn-off-delay time
116
-
ns
tf
Current fall time
194
-
ns
Eon(1)
Turn-on switching energy
0.67
-
mJ
Eoff(2)
Turn-off switching energy
1.36
-
mJ
Ets
Total switching energy
2.03
-
mJ
tsc
Short-circuit withstand
time
VCC
≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
µs
VCC
≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
-
140
-
ns
Qrr
Reverse recovery charge
-
880
-
nC
Irrm
Reverse recovery current
-
17
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
650
-
A/µs
Err
Reverse recovery energy
-
115
-
µJ
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
-
244
-
ns
Qrr
Reverse recovery charge
-
2743
-
nC
Irrm
Reverse recovery current
-
25
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
220
-
A/µs
Err
Reverse recovery energy
-
320
-
µJ



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