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STGF30M65DF2 Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza STGF30M65DF2
Descripción Electrónicos  Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package
PDF  16 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30M65DF2 Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGF30M65DF2
6/16
DocID027430 Rev 5
2.1
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
Ptot
24
16
8
0
-50
0
TC(°C)
(W)
100
32
50
150
VGE
≥ 15V, TJ ≤ 175 °C
GIPD170420151008FSR
IC
15
10
5
0
-50
0
TC(°C)
(A)
100
20
50
150
VGE
≥ 15V, TJ ≤ 175 °C
GIPD170420151016FSR
IC
20
0
0
1
VCE(V)
(A)
4
40
2
3
VGE=15V
60
9V
11V
13V
5
80
100
GIPD100420151008FSR
IC
20
0
0
1
VCE(V)
(A)
4
40
2
3
VGE=15V
60
9V
11V
13V
5
80
100
7V
GIPD100420151025FSR
VCE(sat)
1.8
1.4
-50
TJ(°C)
(V)
100
0
50
2.2
150
VGE= 15V
IC= 60A
IC= 30A
IC= 15A
1
2.6
3
GIPD281020131418FSR
VCE(sat)
2
1
0
IC(A)
(V)
60
20
40
3
80
VGE= 15V
TJ= -40°C
0
4
5
100
TJ= 25°C
TJ= 175°C
GIPD281020131116FSR



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