BLF2425M7LS250P datasheet(3/11 Pages) AMPLEON

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BLF2425M7L250P_2425M7LS250P#5

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Product data sheet

Rev. 5 — 1 September 2015

3 of 11

BLF2425M7L(S)250P

Power LDMOS transistor

5. Thermal characteristics

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF2425M7L250P and BLF2425M7LS250P are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =28V; IDq =20mA; PL = 250 W (CW); f = 2450 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ Unit

Rth(j-case) thermal resistance from junction to case

Tcase =80 C; PL = 250 W

0.19 K/W

Table 6.

DC characteristics

Tj = 25 C per section; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID =2.2 mA

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 220 mA 1.5

1.9

2.3

IDSS

drain leakage current

VGS = 0 V; VDS =28 V

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-39

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

300

gfs

forward transconductance

VDS =10 V; ID =11A

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID =7.7 A

-0.08



Table 7.

RF characteristics

Test signal: CW at 2450 MHz; RF performance at VDS = 28 V; IDq = 20 mA; Tcase = 25 C; unless

otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 250 W

RLin

input return loss

PL = 250 W

18

10

D

drain efficiency

PL = 250 W

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