BLF978P datasheet(9/15 Pages) AMPLEON

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BLF978P

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Product data sheet

Rev. 1 — 3 April 2020

9 of 15

BLF978P

HF / VHF power LDMOS transistor

IDq =2  50 mA; f = 225 MHz; tp = 100 s;  =10%.

(1) VDS = 50 V

(2) VDS = 45 V

(3) VDS = 40 V

(4) VDS = 35 V

(5) VDS = 30 V

IDq =2  50 mA; f = 225 MHz; tp = 100 s;  =10%.

(1) VDS = 50 V

(2) VDS = 45 V

(3) VDS = 40 V

(4) VDS = 35 V

(5) VDS = 30 V

Fig 11. Power gain as a function of output power;

typical values

Fig 12. Drain efficiency as a function of output power;

typical values

VDS = 50 V; f = 225 MHz; tp = 100 s;  =10 %.

(1) IDq = 2  50 mA

(2) IDq = 2  200 mA

(3) IDq = 2  400 mA

(4) IDq = 2  800 mA

(5) IDq = 2  1400 mA

VDS = 50 V; f = 225 MHz; tp = 100 s;  =10%.

(1) IDq = 2  50 mA

(2) IDq = 2  200 mA

(3) IDq = 2  400 mA

(4) IDq = 2  800 mA

(5) IDq = 2  1400 mA

Fig 13. Power gain as a function of output power;

typical values

Fig 14. Drain efficiency as a function of output power;

typical values

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