BLF978P

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© Ampleon Netherlands B.V. 2020. All rights reserved.

Product data sheet

Rev. 1 — 3 April 2020

2 of 15

BLF978P

HF / VHF power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

5.

Thermal characteristics

[1]

[2]

See Figure 1.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF978P

-

flanged balanced ceramic package; 2 mounting holes;

4 leads

SOT539A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

108

V

gate-source voltage

6+11

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1] 0.121 K/W

transient thermal impedance from

junction to case

 =10 %

[2] 0.033 K/W