SiR862DP

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Vishay Siliconix

S10-0041-Rev. A, 11-Jan-10

4

Document Number: 65672

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Safe Operating Area, Junction-to-Ambient

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

1

0.01

0.001

0.1

10

100

T

T

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

T

I

I

0.000

0.003

0.006

0.009

0.012

0.015

012

3

45

67

89

10

V

I

T

T

0

40

80

120

160

200

10

1

1

0

0

.

00.01

Time (s)

0.1

0.01

100

1

100

0.01

0.1

V

*V

1ms

10 ms

100 ms

0.1

1

10

10

T

Single Pulse

1s

DC

10 s

BVDSS

Limited