SiR862DP

www.vishay.com

Vishay Siliconix

S10-0041-Rev. A, 11-Jan-10

1

Document Number: 65672

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

N-Channel 25 V (D-S) MOSFET

FEATURES

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•DC/DC conversion



- Low side switch

• Notebook

• Server

• Game console

Notes

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 65 °C/W

e. Package limited

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

PRODUCT SUMMARY

25

0.0028

0.0035

28.4

50

Configuration

Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR862DP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

25

V

Gate-source voltage

± 20

A

Pulsed drain current

70

Continuous source-drain diode current

Single pulse avalanche current

L = 0.1 mH

40

Avalanche energy

80

mJ

Maximum power dissipation

69

W

44.4

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

 10 s

19

24

°C/W

Maximum junction-to-case (drain)

Steady state

1.2

1.8