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STP12N65M2 Datasheet(PDF) 7 Page - STMicroelectronics

No. de pieza STP12N65M2
Descripción Electrónicos  N-channel 650 V, 0.42 typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12N65M2 Datasheet(HTML) 7 Page - STMicroelectronics

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STP12N65M2
Electrical characteristics
DocID031324 Rev 1
7/13
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
GIPD161220141823MT
C
10
1
0.1
1
100
VDS(V)
10
(pF)
0.1
100
1000
Ciss
Coss
Crss
VGS(th)
0.8
-75
-25
25
Tj(°C)
(norm)
0.6
75
0.7
0.9
1.0
125
1.1
ID = 250 µ A
GIPD180920141442FSR
V(BR)DSS
0.96
-75
-25
75
Tj(°C)
25
(norm)
0.88
125
0.92
1.00
1.04
1.08
ID= 1m A
GIPD180920141448FSR
E
1
0
100
300
VDS(V)
200
(µJ)
0
400
500
600
2
3
4
GIPD171220141020MT
GIPD161220141847MT
VSD
0.7
0
2
6
ISD(A)
4
(V)
0.5
8
0.6
0.8
0.9
Tj= 150°C
Tj= -50°C
Tj= 25°C
1
1.1



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