STP12N65M2 datasheet(1/13 Pages) STMICROELECTRONICS

No. de pieza	STP12N65M2

Descripción Electrónicos	N-channel 650 V, 0.42 typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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November 2017

DocID031324 Rev 1

1/13

This is information on a product in full production.

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STP12N65M2

N-

channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STP12N65M2

650 V

0.50 Ω

8 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP12N65M2

12N65M2

TO-220

Tube

1

2

3

TO-220

TAB

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STP12N65M2 Datasheet(PDF) 1 Page - STMicroelectronics

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