APM4435K datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. B.2 - Jun., 2006

www.anpec.com.tw

APM4435K

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

-30

VGSS

Gate-Source Voltage

±25

ID*

Continuous Drain Current

-8

IDM*

Pulsed Drain Current

VGS=-10V

-30

IS*

Diode Continuous Forward Current

-3

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Maximum Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM4435K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250

µA

-30

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TA=25°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

-1

-1.5

-2

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

±100

VGS=-10V, IDS=-8A

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-5A

Ω

VSD

Diode Forward Voltage

ISD=-3A, VGS=0V

-0.8

-1.3

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ω

Ciss

Input Capacitance

3200

Coss

Output Capacitance

560

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-25V,

Frequency=1.0MHz

250

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

136

Turn-off Fall Time

VDD=-15V, RL=15

Ω,

IDS=-1A, VGEN=-10V,

RG=6

Ω,

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