HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HD200204

Issued Date : 2002.04.01

Revised Date : 2005.08.18

Page No. : 1/4

HTIP117D

HSMC Product Specification

HTIP117D

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP117D is designed for use in general purpose amplifier and low-speed

switching applications.

• Maximum Temperatures

Storage Temperature ................................................................... -55 ~ +150

°C

Junction Temperature .......................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T

• Maximum Voltages and Currents

BV

BV

BV

I

I

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV

CBO

-100

-

-

V

I

BV

CEO

-100

-

-

V

I

I

CBO

--

-1

mA

V

I

CEO

--

-2

mA

V

I

EBO

--

-2

mA

V

*V

CE(sat)

--

-2.5

V

I

*V

BE(on)

--

-2.8

V

I

*h

FE1

1-

-

K

I

*h

FE2

500

-

-

I

Cob

-

-

200

pF

V

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Darlington Schematic

TO-126ML

R2

R1

C

E

B