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IXDN430 Datasheet(PDF) 1 Page - IXYS Corporation

No. de pieza IXDN430
Descripción Electrónicos  30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
PDF  12 Pages
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDN430 Datasheet(HTML) 1 Page - IXYS Corporation

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First Release
Copyright © IXYS CORPORATION 2004
Ordering Information
General Description
TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhigh
current gate drivers specifically designed to drive MOSFETs
and IGBTs to their minimum switching time and maximum
practical frequency limits. The IXD_430 can source and sink
30A of peak current while producing voltage rise and fall times
of less than 30ns. The input of the drivers are compatible with
TTL or CMOS and are fully immune to latch up over the entire
operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.
The IXD_430 incorporates a unique ability to disable the output
under fault conditions. The standard undervoltage lockout is at
12.5V which can also be set to 8.5V in the IXDS430SI. When a
logical low is forced into the Enable inputs, both final output
stage MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD430 enters a tristate mode and
enables a Soft Turn-Off of the MOSFET when a short circuit is
detected. This helps prevent damage that could occur to the
MOSFET if it were to be switched off abruptly due to a dv/dt
over-voltagetransient.
The IXDN430 is configured as a noninverting gate driver, and the
IXDI430 is an inverting gate driver. The IXDS430 can be configured
eitherasanoninvertingorinvertingdriver.TheIXD_430areavailable
in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the
TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28-
pin SOIC package refers to the backside metal heatsink tab.
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 5600 pF in <25ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• LineDrivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• PulseTransformerDriver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
P a rt N u m b e r
P a c k a g e Type
Te m p . R a nge
C onfigura tion
IX D D 430Y I
5-pin T O -2 6 3
IX D D 430C I
5-pin T O -2 2 0
-55°C to +1 25°
N o n In ve rtin g w ith
E nable
IX D I430Y I
5-pin T O -2 6 3
IX D I430C I
5-pin T O -2 2 0
-55°C to +1 25°
In ve rtin g
IX D N 430Y I
5-pin T O -2 6 3
IX D N 430C I
5-pin T O -2 2 0
-55°C to +1 25°
N on In ve rtin g
IX D S 430S I
28-pin S O IC
-55°C to +1 25°
In ve rtin g / N o n
In ve rtin g w ith E nable
and U V S E L
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
IXDN430 / IXDI430 / IXDD430 / IXDS430
DS99045B(8/04)


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