BLF242 datasheet(4/11 Pages) PHILIPS

4 / 11 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF242

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 0.1 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 28 V

−−

µA

IGSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 3 mA; VDS = 10 V

−

4.5

gfs

forward transconductance

ID = 0.3 A; VDS = 10 V

0.16

0.24

−

RDS(on)

drain-source on-state resistance

ID = 0.3 A; VGS = 1 V

−

3.3

Ω

IDSX

on-state drain current

VGS = 10 V; VGS = 10 V

−

1.2

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

9.4

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

1.7

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS =10V.

handbook, halfpage

100

200

300

–2

–4

MBB777

ID (mA)

T.C.

(mV/K)

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

1.5

0.5

510

MGP142

VGS (V)

(A)

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