Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUX86P

BUX87P

GENERAL DESCRIPTION

High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in

converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

BUX

86P

87P

V

CESM

Collector-emitter voltage peak value

V

-

800

1000

V

V

CEO

Collector-emitter voltage (open base)

-

400

450

V

V

CESAT

Collector-emitter saturation voltage

I

-

1

V

I

C

Collector current (DC)

-

0.5

A

I

CM

Collector current peak value

-

1

A

P

tot

Total power dissipation

T

-

42

W

t

f

Fall time

I

0.28

-

µs

PINNING - SOT82

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

emitter

2

collector

3

base

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BUX

86P

87P

V

CESM

Collector-emitter voltage peak value

V

-

800

1000

V

V

CEO

Collector-emitter voltage (open base)

-

400

450

V

V

EBO

Emitter-base voltage (open collector)

-

5

V

I

C

Collector current (DC)

-

0.5

A

I

CM

Collector current (peak value) t

-

1

A

I

B

Base current (DC)

-

0.2

A

I

BM

Base current (peak value)

-

0.3

A

-I

BM

Reverse base current (peak value)

1

-

0.3

A

P

tot

Total power dissipation

T

-

42

W

T

stg

Storage temperature

-40

150

˚C

T

j

Junction temperature

-

150

˚C

1

23

b

c

e

1 Turn-off current.

November 1995

1

Rev 1.100