Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUX86P

BUX87P

Fig.1. Test circuit resistive load. V

V

R

Fig.2. Switching times waveforms with resistive load.

Fig.3. Normalised power dissipation.

PD% = 100

⋅PD/PD

Fig.4. Transient thermal impedance.

Z

Fig.5. Typical base-emitter saturation voltage.

V

Fig.6. Typical collector-emitter saturation voltage.

V

tp

T

VCC

R

R

T.U.T.

0

VIM

B

L

1.0E-06

0.0001

0.01

1

0.01

0.1

1

10

0

0.2

0.1

0.05

0.02

0.5

Zth / (K/W)

bux86p

t / s

D=

D =

tp

T

T

P

t

D

IC

IB

10 %

10 %

90 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

0

5

10

15

20

0.6

0.7

0.8

0.9

VBESAT / V

BUX86P

IB / mA

IC =

0.2 A

0.1 A

50 mA

0

20

40

60

80

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

0

5

10

15

20

25

30

0

2

4

6

8

10

IB / mA

VCESAT / V

BUX86P

IC =

50 mA

0.1 A

0.2 A

November 1995

3

Rev 1.100