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M49000000S Datasheet(PDF) 57 Page - Advanced Micro Devices

No. de pieza M49000000S
Descripción Electrónicos  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
PDF  64 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

M49000000S Datasheet(HTML) 57 Page - Advanced Micro Devices

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Am49DL32xBG
July 19, 2002
P R E L I M I NARY
pSRAM AC CHARACTERISTICS
Write Cycle
Notes:
1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
2. If OE# is high during the write cycle, the outputs will remain at high impedance.
3. If CE#1s, LB# or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance.
4. If CE#1s, LB# or UB# goes high at the same time or before WE# goes high, the outputs will remain at high impedance.
Figure 30.
Pseudo SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Speed
Unit
70
85
t
WC
Write Cycle Time
Min
70
85
ns
t
WP
Write Pulse Time
Min
50
60
ns
t
CW
Chip Enable to End of Write
Min
60
70
ns
t
BW
Data Byte Control to End of Write
Min
60
70
ns
t
AS
Address Setup Time
Min
0
ns
t
WR
Write Recovery Time
Min
0
ns
t
ODW
WE# Low to Write to Output High-Z
Max
20
ns
t
OEW
WE# High to Write to Output Active
Min
0
ns
t
DS
Data Set-up Time
Min
30
t
DH
Data Hold from Write Time
Min
0
ns
t
CH
CE2 Hold Time
Min
300
µs
tWC
tWP
tWR
tCW
tBW
Valid Data In
tAS
tCH
tOEW
Addresses
A0 to A20
WE#
CE#1
CE2
LB#, UB#
DIN
I/O1 to 16
DOUT
I/O1 to 16
tODW
tDS
tDH
High-Z
(Note 1)
(Note 3)
(Note 4)



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